202129 Jul

STMicroelectronics manufactures first 200mm silicon carbide wafers


The transition to 200mm SiC wafers marks an important milestone in the capacity build-up for ST’s customer programmes in automotive and industrial sectors and will consolidate ST’s position within disruptive semiconductor technology that allows for smaller, lighter, and more efficient power electronics with a lower total cost of ownership. The low defectivity has been achieved by building on the know-how and expertise in SiC ingot growth technology developed by STMicroelectronics Silicon Carbide (formerly Norstel, which ST acquired in 2019). The transition to 200mm SiC substrates requires a step forward in manufacturing equipment and overall supporting ecosystem performance. ST, in collaboration with technology partners covering the entire supply chain, is developing its own 200mm SiC manufacturing equipment and processes. ST currently manufactures its STPOWER SiC products on two 150mm wafer lines in its fabs in Catania (Italy) and Ang Mo Kio (Singapore) and performs assembly and test at its back-end sites in Shenzhen (China) and Bouskoura (Morocco).

Source: Electronicspecifier