STMicroelectronics launches MDmesh MOSFETs

New Products

▤ Summary

Both have very low on-resistance (R ) per unit area, which maximises power density and permits compact system dimensions. With very low gate charge (Q ), typically 80nC at 400V drain voltage, these devices have the best R x Q figure of merit (FoM) currently available. The gate threshold voltage (V ), typically 3.7V for the STP65N045M9 and 4.0V for STP60N043DM9, minimises both turn-on and turn-off switching losses compared with the earlier MDmesh M5 and M6/DM6. A further feature of ST’s latest high-voltage MDmesh technologies is an additional platinum diffusion process that ensures a fast intrinsic body diode. ST’s new MDmesh M9 and DM9 devices, the STP65N045M9 and STP60N043DM9, both in a TO-220 power package, are already in production and they will be available at distributors by the end of Q2 2022.

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