Fairchild Semiconductors Power Stage Dual Asymmetric MOSFETs Address Power Supply Designers Need for High Power Density, Ease of Design
Summary
San Jose, CA, June 15, 2011 --( The FDMS36xxS family incorporates a control and synchronous MOSFET, as well as a monolithic Schottky body diode in a PQFN package.The product family is optimized to minimize the combination of conduction and switching losses from 300kHz to 600KHz delivering reliable, highest power efficiency for point-of-load and multi-phase synchronous buck DC-DC applications.Follow us on Twitter @ http://twitter.com/FairchildSemi View product and company videos, listen to podcasts and comment on our blog @ http://www.fairchildsemi.com/engineeringconnections Visit us on Facebook @ http://www.facebook.com/FairchildSemiconductor Editorial Contacts: Fairchild Semiconductor: Paul R. Hughes Product PR Manager 1-(800) 341-0392 X 3110 Email: paul.hughes@fairchildsemi.com Agency: Sarah Thomas Topaz Partners 1-(781)-404-2427 Email: fairchild@topazpartners.com ### San Jose, CA, June 15, 2011 --( PR.com )-- Power supply engineers have two main challenges – reduce the amount of space they use and increase power density.To help designers meet these challenges, Fairchild Semiconductor (NYSE: FCS), a leading global supplier of high performance power and mobile products, developed the FDMS36xxS family of power stage dual asymmetric MOSFET modules.The FDMS36xxS family incorporates a control and synchronous MOSFET, as well as a monolithic Schottky body diode in a PQFN package.By integrating these devices into one module, the FDMS36xxS family reduces board space by replacing two or more 5mm x 6mm PQFN, S08 and DPAK packages.The FDMS36XXS family of products is designed using Fairchild’s advance charge-balanced device architecture (Shielded Gate Technology) and advanced packaging technology to achieve industry-leading sub-2mOhm low side RDS(ON) at high performance computing rated breakdown voltages.