NXP and hitachi energy collaborate on power module
Summary
Why it matters: Compared to traditional silicon IGBTs, SiC MOSFET power devices offer electric vehicle makers the ability to increase the range and overall efficiency of their systems. SiC MOSFET power devices, enabled by high-performance power semiconductor modules and isolated gate drivers, offer faster switching speeds, lower turn-on resistance and reduced thermal dissipation that can help drive down the size and cost of an electric vehicle’s (xEV’s) powertrain inverter and lower the required capacity of the battery pack, extending the vehicle’s range. To attain optimal performance, the power module is paired with NXP’s GD3160 high-voltage, isolated gate driver which enables fast and reliable switching and fault protection. Hitachi Energy has been leveraging its technology and the experience gained in the industrial and transportation segments to develop its high-density RoadPak automotive SiC power modules for e-mobility applications. The RoadPak half-bridge power module incorporates 1200V SiC MOSFETs, integrated cooling pin-fins and low inductance connections all in a small form factor.