Renesas Expands RF Portfolio to Cover Complete Signal Chain for Macro Base Stations
Summary
These new RF devices perform well across a wide range of environmental conditions and frequency bandwidths, and integrate Renesas’ Smart Silicon™ innovations, which enable smaller footprints for a given function – a key advantage for the large number of antenna paths required for each system. • Highly integrated F4482/1 quad-path TX VGAs • Balun, low pass filter, amplifier, and digital step attenuators integrated on one die • Renesas’ Zero Distortion™ technology for enhanced quality of service with increased dynamic range, and Glitch-Free™ technology to protect PA Assembly and simplify DPD implementation • Dual-channel F011x first-stage LNAs (balanced LNA or two-channel LNA) • Low noise figure of 0.55dB at 2600 MHz with low return loss (-27dB input, -23dB output) • High-linearity F1471 RF driver amplifier • RF frequency range of 400 MHz to 4200 MHz with 17dB gain • OIP3 up to +38dBm and OP1dB of 28.5dBm at 2600 MHz • High-reliability SP2T F2934 RF switch • Higher isolation (70dB at 1 GHz and 2 GHz, 74dB at 3 GHz, and 67dB at 4 GHz) in a small 3x3 QFN package that addresses PCB real estate constraints Renesas has a strong innovation legacy with circuit design to address the evolving needs of the wireless infrastructure market. Patented Renesas RF solutions with unique technical differentiation address the needs of a wide range of applications, including massive MIMO and mmWave cellular base stations, communications systems, microwave (RF/IF), CATV, and test and measurement equipment. Renesas Electronics Corporation (TSE: 6723) delivers trusted embedded design innovation with complete semiconductor solutions that enable billions of connected, intelligent devices to enhance the way people work and live. A global leader in microcontrollers, analog, power, and SoC products, Renesas provides comprehensive solutions for a broad range of automotive, industrial, Infrastructure, and IoT applications that help shape a limitless future.