Samsung Electronics Takes 3D Memory to New Heights With Sixth-Generation V-NAND SSDs for Client Computing
Summary
This is achieved by building an electrically conductive mold stack comprised of 136 layers, then vertically piercing cylindrical holes from top to bottom, creating uniform 3D charge trap flash (CTF) cells. As the mold stack in each cell area increases in height, NAND flash chips tend to become more vulnerable to errors and read latencies. To overcome such limitations, Samsung has incorporated a speed-optimized circuit design that allows it to achieve the fastest data transfer speed, at below 450 microseconds (μs) for write operations and below 45μs for reads. Leveraging the high-speed and low-power features, Samsung plans to not only broaden the reach of its 3D V-NAND into areas like next-generation mobile devices and enterprise servers, but also into the automotive market where high reliability is extremely critical. The company also expects to expand production of higher-speed and greater-capacity sixth-generation V-NAND solutions at its Pyeongtaek (Korea) campus starting next year to better meet demand from global customers.