Vishay Intertechnology Gen 3 1200 V SiC Schottky diodes
Summary
Featuring a merged PIN Schottky (MPS) design, the Vishay Semiconductors devices combine high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power designs. The diodes offer a low capacitance charge down to 28 nC, while their MPS structure — which features a backside thinned via laser annealing technology — delivers a reduced forward voltage drop of 1.35 V. In addition, the devices low typical reverse leakage current down to 2.5 µA at 25 °C reduces conduction losses, ensuring high system efficiency during light loads and idling. Typical applications for the diodes will include AC/DC PFC and DC/DC ultra high-frequency output rectification in FBPS and LLC converters for solar power inverters; energy storage systems; industrial drives and tools; and data centres. For the harsh environments of these applications, the devices combine operating temperatures to +175 °C with forward surge ratings to 260 A for high robustness. In addition, diodes in the D²PAK 2L package feature a moulding compound with a high CTI ≥ 600, ensuring excellent electrical insulation at elevated voltages.