Cambridge GaN Devices at APEC 2024
Summary
In addition to having its largest-ever booth at the show, the company will contribute with a number of papers including an analysis of how GaN can play a part in supporting the exponential growth in power demanded by datacentres as the use of Artificial Intelligence (AI) proliferates. Giorgia Longobardi | Chief Executive Officer, CGD: “With datacentres now demanding 100kW per rack and predicting even more in the very near future, power system designers are looking to employ GaN devices in new architectures. • Thursday 29th February, 09:45 - 10:10: ‘Monolithic integration addresses the design challenges of GaN Power devices’, with Di Chen, Director of Business Development & Technical Marketing, CGD. ICeGaN H2 single-chip eMode HEMTs can be driven like a MOSFET, without the need for special gate drivers, complex and lossy driving circuits, negative voltage supply requirements or additional clamping components. Andrea Bricconi, Chief Commercial Officer, CGD: “GaN is now accepted as a reliable and proven technology that is able to deliver high efficiency and power density simultaneously.