X-Fab unveils 110nm BCD-on-SOI process
Summary
It brings together the appealing attributes associated with both SOI and DTI, so that high-density digital logic and analog functionality can be more easily incorporated in a single chip compared to traditional bulk BCD. By moving to a lower process node, the X-FAB XT011 offering provides double the standard cell library density of its established XT018 180 nm BCD-on-SOI semiconductor platform. The thermal performance has been enhanced significantly, which means that high-current applications can be better addressed – matching what would normally be expected of a bulk BCD process. With no parasitic bipolar effects being witnessed, the risk of latch-ups occurring can be eliminated – thereby assuring the highest degrees of operational reliability. A comprehensive process design kit (PDK) provided by X-FAB for XT011 as well as a broad array of IP elements, such as SRAM, ROM, SONOS-based flash and embedded EEPROM, are available.