Navitas & VREMT open joint R&D Lab for next-gen EV power systems and semiconductors
Summary
GaN and SiC are ‘wide bandgap’ power semiconductors that deliver higher efficiency at faster switching speeds, with smaller system size and lower costs than legacy silicon chips. The joint R&D lab will be further supported by Navitas’ own unique EV System Design Center, located in Shanghai. The Design Center assists customers to maximize GaN and SiC performance advantages, including high-frequency magnetics design plus advanced packaging and modules to create higher power density, higher efficiency, and lower system cost power electronics systems for EVs. “Navitas’ next-generation power semiconductors bring enormous value to VREMT’s design teams,” said Mr. Guo. “This new partnership is aligned on both technical goals and also for sustainability, as both companies focus on carbon neutrality.”