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Summary
( ) Finwave Semiconductor Raises $12.2M Series A Funding Round to Advance the Ultimate Transistor for 5G WALTHAM, Mass., July 27, 2022-- 3DGaNTM (Gallium Nitride) innovators Finwave Semiconductor, Inc.ctor, Inc. today announced a $12.2 million Series A funding round led by Fine Structure Ventures with additional participation from Citta Capital, Soitec, Safar Partners and Alumni Ventures. The funds will be used to expand the company\x92s team, product development activities and lab facilities \x96 all in advancement of Finwave\x92s mission to revolutionize the future of 5G communications with next-generation 3DGaN FinFET technology. \x93The company combines best-in-class power amplification efficiency with high-volume manufacturing to overcome the performance and cost limitations that have together stymied widespread adoption of mmWave. We are thrilled to be working with Finwave to bring their revolutionary products to market.\x94 mmWave is critical to the future of all wireless technology, but the realization of its potential faces severe roadblocks. Finwave\x92s advanced 3DGaNTM technology is the discovery of prominent MIT innovators who are focused on bringing the true potential of GaN to key industries including 5G, AI, cloud computing, and EV and autonomous vehicles.