Finwave Semiconductor Raises $12.2M Series A Funding Round to Advance the Ultimate Transistor for 5G
Summary
The funds will be used to expand the companys team, product development activities and lab facilities all in advancement of Finwaves mission to revolutionize the future of 5G communications with next-generation 3DGaN FinFET technology.Finwaves technology unlocks the promise of 5G, said Jennifer Uhrig, senior managing director at Fine Structure Ventures, a venture capital fund affiliated with FMR LLC, the parent company of Fidelity Investments. The company combines best-in-class power amplification efficiency with high-volume manufacturing to overcome the performance and cost limitations that have together stymied widespread adoption of mmWave. We are thrilled to be working with Finwave to bring their revolutionary products to market.mmWave is critical to the future of all wireless technology, but the realization of its potential faces severe roadblocks. Currently, 5G networks are being held back from realizing their true potential due to a critical missing component: high-performance mmWave power amplifier technology.High-performance GaN-on-Silicon (GaN-on-Si) brings a new option to the table that could make 5G millimeter wave more practical. By leveraging high volume 8 Si CMOS fabs for producing 3DGaN chips, Finwaves devices benefit from both the cost model and scalability of silicon technology.3DGaN FinFET technology is a result of over 10 years of research and development, initially developed at MIT and recognized with the coveted 2012 IEEE Electron Device Society George Smith Award, noted Dr. Bin Lu, Finwaves CEO and co-founder.
Funding
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