Gallium nitride transistors released in updated design

▤ Summary

The new GaN transistors GS-065-060-3-B/T provide low R (25 mΩ) and feature a 60 A IDS rating and GaN Systems’ Island Technology cell layout for high-current die performance and yield. The devices feature an updated design and are offered in GaNpx packaging that enables low inductance and low thermal resistance in a small package. The GS-065-060-3-B is bottom-side cooled; the GS-065-060-3-T is top-side cooled. Both offer low junction-to-case thermal resistance for demanding high-power applications, including solar inverters, energy storage systems, on-board chargers, uninterruptable power supplies, industrial motor drives and wireless power transfer. Additional key features of the new GaN transistors include:

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