Nexperia promotes GaN in automotive design
Summary
The program will focus on power systems for EVs, with the aim to jointly develop automotive applications using GaN technology. UAES has started using Nexperia GaN FETs in R&D and collaborative projects including vehicle-mounted chargers and high voltage DC/DC converters for EVs. The company explained that its GaN technology results in figures of merit (RDS(on) x QGD) and reverse recovery charge (Qrr) metrics to support high switching frequencies and efficient power conversion. Paul Zhang, senior vice president sales & marketing and general manager, Nexperia, China said: “The power density and efficiency of silicon-based GaN field-effect transistors will play key roles in the electrification of cars,” adding that UAES has a broad offering and customer base. Growing thick GaN epitaxial layers on large diameter silicon substrate has been a recent breakthrough which reduces the cost per wafer and allows processing in existing 200mm fabs.