202126 Aug

STMicroelectronics introduce new MasterGaN devices

Summary

Joining the MasterGaN1, MasterGaN2, and MasterGaN4, which target applications from 65W to 400W, the additions give extra flexibility to choose the optimum Gallium Nitride (GaN) device and driver solution when designing switched-mode power supplies, chargers, adapters, high-voltage Power-Factor Correction (PFC), and DC/DC converters. The company have claimed that ST’s MasterGaN concept simplifies migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology. The devices integrate two 650V power transistors with optimised high-voltage gate drivers and associated safety and protection circuitry, eliminating gate-driver and circuit-layout design challenges. Combined with the higher switching frequencies possible with GaN transistors, these integrated devices enable power supplies that are up to 80% smaller than silicon-based designs as well as robust and reliable. Housed in a 9mm x 9mm GQFN package optimized for high-voltage applications with 2mm creepage distance between high-voltage and low-voltage pads, MasterGaN3 and MasterGaN5 are in production now, priced from $6.08 for MasterGaN3 and $5.77 for MasterGaN5, for orders of 1,000 pieces.

Source: Electronicspecifier

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